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Fused silica, silicon
8" wafer scale
Binary, 8-level, 16-level
0.5 μm Minimum feature size
< 70 nm overlay accuracy
Diffraction efficiency up to 98 %
190 nm to 5 μm wavelength range
Key Specifications
Suitable for very demanding applications such as DOE-based spot generators, DUV wafer stepper illumination systems, high-power laser beam shaping, vortex lenses for fiber interconnects, random DOE and diffusers for beam smoothing, metrology, medical devices and masters for imprint or replication.
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Specifications |
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Materials |
Fused silica (various grades) and silicon |
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Composition |
2 (binary) to 16 levels |
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Precision |
Typically overlay error < 70 nm |
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Minimum feature size |
500 nm to 1 μm depending on step height and / or etch depths |
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Efficiency |
Up to 96 % |
Applications
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